jiangsu changjiang electronics technology co., ltd sot-89 -3l plastic-encapsulate transistors 2s d1664 transistor (npn) features z low v ce(sat) , v ce(sat) =0.15v(typical).(i c /i b =500ma/50ma) z complements to 2sb1132 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.5 a dc current gain h fe v ce =3v, i c =100ma 82 390 collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =50ma 0.4 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 150 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 15 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking dap daq dar sot-89 -3l 1. base 2. collector 3. emitter 1 2 3 www.cj-elec.com 1 c , nov ,2015 b,jan,2012
0.1 1 10 1 10 100 1000 10 100 10 100 1e-3 0.01 0.1 1 0 100 200 300 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 0.0 0.4 0.8 1.2 1e-3 0.01 0.1 1 10 100 1000 02468 0 25 50 75 100 125 150 500 300 30 3 20 f=1mhz i e =0 / i c =0 t a =25 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =5v t a =25 i c f t ?? common emitter v ce = 3v t a =100 t a =25 collector current i c (a) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) common emitter t a =25 0.80ma 0.72ma 0.64ma 0.56ma 0.48ma 0.40ma 0.32ma 0.24ma 0.16ma i b =0.08ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 2 c , nov ,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 c , nov ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 c , nov ,2015
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